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1. product profile 1.1 general description a 500 w ldmos rf power transistor for tr ansmitter applications and industrial applications. the transistor is optimized for digital applications and can deliver 65 w average dvb-t at 1.5 ghz. the excellent r uggedness of this device makes it ideal for digital transmitter applications. [1] measured [dbc] with delta marker at 4.3 mhz from center frequency. [2] par (of output signal) at 0.01 % probability on ccdf; pa r of input signal = 9.5 db at 0.01 % probability on ccdf. 1.2 features and benefits ? easy power control ? integrated esd protection ? excellent ruggedness ? high efficiency ? excellent thermal stability ? internally matched for ease of use ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? digital transmitter applications dvb at 1.5 ghz ? industrial applications at 1.5 ghz blf6g15l-500h; BLF6G15LS-500H power ldmos transistor rev. 3 ? 12 july 2013 product data sheet table 1. test information rf performance at v ds = 50 v; i dq = 1.3 a. mode of operation f p l(av) g p ? d imd3 imd shldr par (mhz) (w) (db) (%) (dbc) (dbc) (db) 2-tone, class-ab 1452 to 1492 250 15 34 ? 24 - - dvb-t (8k ofdm) 1452 to 1492 65 16 19 - ? 32 [1] 9 [2]
blf6g15l-500h_6g15ls-500h all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 12 july 2013 2 of 13 nxp semiconductors blf6g15l-500h; BLF6G15LS-500H power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol blf6g15l-500h (sot539a) 1drain1 2drain2 3gate1 4gate2 5source [1] BLF6G15LS-500H (sot539b) 1drain1 2drain2 3gate1 4gate2 5source [1] 5 12 43 4 3 5 1 2 sym117 5 12 43 4 3 5 1 2 sym117 table 3. ordering information type number package name description version blf6g15l-500h - flanged balanced ldmost ceramic package; 2 mounting holes; 4 leads sot539a BLF6G15LS-500H - earless flanged balanced ldmost ceramic package; 4 leads sot539b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 100 v v gs gate-source voltage ? 0.5 +13 v i d drain current - 45 a t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c
blf6g15l-500h_6g15ls-500h all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 12 july 2013 3 of 13 nxp semiconductors blf6g15l-500h; BLF6G15LS-500H power ldmos transistor 5. thermal characteristics 6. characteristics [1] measured [dbc] with delta marker at 4.3 mhz from center frequency. [2] par (of output signal) at 0.01 % probability on ccdf; par of input signal = 9.5 db at 0.01 % probability on ccdf. 6.1 ruggedness in class-ab operation the blf6g15l-500h and BLF6G15LS-500H are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =50 v; i dq = 1.3 a at rated power. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-case) thermal resistance from junction to case t case =85 ? c; p l = 65 w 0.18 k/w table 6. dc characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 2.7 ma 100 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 270 ma 1.4 1.8 2.4 v i dss drain leakage current v gs =0v; v ds =50v--2.8 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v 38 42 - a i gss gate leakage current v gs =11v; v ds =0v--280na g fs forward transconductance v ds =10v; i d = 270 ma 1.33 2.3 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =9.5a -100193m ? table 7. rf characteristics rf characteristics in nxp class-ab production circuit, in frequency range 1452 mhz to 1492 mhz; t case = 25 ? c. symbol parameter conditions min typ max unit dvb-t (8k ofdm), class-ab v ds drain-source voltage - 50 - v i dq quiescent drain current - 1.3 - a p l(av) average output power - 65 - w g p power gain 14.5 16 - db ? d drain efficiency 16 19 - % imd shldr intermodulation distortion shoulder [1] - ? 32 ? 30 dbc par peak-to-average ratio [2] 8.5 9 - db
blf6g15l-500h_6g15ls-500h all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 12 july 2013 4 of 13 nxp semiconductors blf6g15l-500h; BLF6G15LS-500H power ldmos transistor 7. application information 7.1 impedance information 7.2 graphs 7.2.1 2-tone table 8. typical impedance typical values per section unless otherwise specified. f z s z l mhz ? ? 1452 1.226 ? j2.663 2.137 ? j2.750 1472 1.375 ? j2.757 1.869 ? j2.378 1492 1.15 ? j2.735 1.817 ? j2.684 fig 1. definition of transistor impedance 001aaf059 drain z l z s gate v ds = 50 v; i dq = 1.3 a; f = 1490 mhz. v ds = 50 v; i dq = 1.3 a; f = 1490 mhz. fig 2. 2-tone power gain and drain efficiency as function of average load power; typical values fig 3. 2-tone power gain and third order intermodulation distortion as function of average load power; typical values p l(av) (w) 0 400 300 100 200 001aao061 14 12 16 18 g p (db) g p d (%) 10 20 10 30 40 0 d p l(av) (w) 0 400 300 100 200 001aao062 14 12 16 18 g p (db) g p imd3 (dbc) 10 -24 -36 -12 0 -48 imd3
blf6g15l-500h_6g15ls-500h all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 12 july 2013 5 of 13 nxp semiconductors blf6g15l-500h; BLF6G15LS-500H power ldmos transistor 7.2.2 dvb-t v ds = 50 v; i dq = 1.3 a; f = 1490 mhz. v ds = 50 v; i dq = 1.3 a; f = 1490 mhz. fig 4. dvb-t power gain and intermodulation distortion shoulder as function of average load power; typical values fig 5. dvb-t peak-to-average ratio and drain efficiency as function of average load power; typical values v ds = 50 v; i dq = 1.3 a; p l(av) = 65 w. v ds = 50 v; i dq = 1.3 a; p l(av) = 65 w. fig 6. dvb-t peak-to-average ratio and drain efficiency as function of frequency; typical values fig 7. dvb-t power gain and intermodulation distortion shoulder as a function of frequency; typical values p l(av) (w) 0 400 300 100 200 001aao063 15 14 16 17 g p (db) g p imd shldr (dbc) 13 -25 -35 -15 -5 -45 imd shldr p l(av) (w) 0 400 300 100 200 001aao064 4 8 12 par (db) d (%) 0 20 10 30 40 0 d par 001aao065 f (mhz) 1400 1550 1500 1450 7 8 6 9 10 par (db) 5 19 21 17 23 25 d (%) 15 par d 001aao066 f (mhz) 1400 1550 1500 1450 10 15 20 g p (db) 5 -30 -40 -20 -10 imd shldr (dbc) -50 g p imd shldr
blf6g15l-500h_6g15ls-500h all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 12 july 2013 6 of 13 nxp semiconductors blf6g15l-500h; BLF6G15LS-500H power ldmos transistor 7.2.3 reliability ttf (0.1 % failure fraction). the reliability at pulsed conditions can be calculated as follows: ttf (0.1 %) ? 1 / ? . (1) t j =100 ? c (2) t j =120 ? c (3) t j =140 ? c (4) t j =146 ? c (5) t j =160 ? c (6) t j =180 ? c (7) t j =200 ? c fig 8. BLF6G15LS-500H electromigration (i ds(dc) , total device) 001aao067 10 3 10 10 2 10 5 10 4 10 6 years 1 l ds(dc) (a) 0 20 15 10 5 (4) (3) (2) (1) (7) (6) (5)
blf6g15l-500h_6g15ls-500h all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 12 july 2013 7 of 13 nxp semiconductors blf6g15l-500h; BLF6G15LS-500H power ldmos transistor 7.3 test circuit printed-circuit board (pcb): rogers 4350; ? r = 3.66; thickness = 0.30 mm; thickness copper plating = 35 ? m. see table 9 for list of components. fig 9. component layout for class-ab common source amplifier 001aao068 c15 c13 c16 c14 r3 c19 r1 c6 c4 c5 c2 c12 c7 c1 25 mm 50 mm 5 mm 5 mm 60 mm vds c3 c11 c9 c10 c8 c17 c18 r2 8 mm 8 mm 5 mm 60 mm 17 mm 14 mm 23 mm 14 mm 23 mm table 9. list of components see figure 9 for component layout. component description value remarks c1 electrolytic capacitor 470 ? f, 6 3 v e l c o c2, c7, c16, c17 multilayer ceramic chip capacitor 10 ? ftdk c3, c8 multilayer ceramic chip capacitor 6.2 pf atc800b c4, c5, c9, c10 multilayer ce ramic chip capacitor 1.0 ? f 1206 10 % c6, c11 multilayer ceramic chip capacitor 10 nf 1205 10 % c12, c13 multilayer ceramic chip capacitor 22 pf atc800b c18, c19 multilayer ceramic chip capacitor 22 pf atc800b c15 electrolytic capacitor 470 ? f; 63 v r1, r2 smd resistor 5r1 ? 0805 r3 smd resistor 470 ? (not fitted) 1206
blf6g15l-500h_6g15ls-500h all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 12 july 2013 8 of 13 nxp semiconductors blf6g15l-500h; BLF6G15LS-500H power ldmos transistor 8. package outline fig 10. package outline sot539a references outline version european projection issue date iec jedec eiaj sot539a 12-05-02 10-02-02 0 5 10 mm scale p a f b e d u 2 l h q c 5 12 4 3 d 1 e a w 1 ab m m m q u 1 h 1 c b m m w 2 c e 1 m w 3 unit a mm d b 11.81 11.56 0.18 0.10 31.55 30.94 13.72 9.53 9.27 17.12 16.10 10.29 10.03 4.7 4.2 c e u 2 0.25 0.25 0.51 w 3 35.56 qw 2 w 1 f 1.75 1.50 u 1 41.28 41.02 h 1 25.53 25.27 p 3.30 3.05 q 2.26 2.01 ee 1 9.50 9.30 inches 0.465 0.455 0.007 0.004 1.242 1.218 d 1 31.52 30.96 1.241 1.219 0.540 0.375 0.365 0.674 0.634 0.405 0.395 0.185 0.165 0.010 0.010 0.020 1.400 0.069 0.059 1.625 1.615 1.005 0.995 0.130 0.120 0.089 0.079 0.374 0.366 h 3.48 2.97 0.137 0.117 l dimensions (millimetre dimensions are derived from the original inch dimensions) flanged balanced ceramic package; 2 mounting holes; 4 leads sot539a note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on m3 screw.
blf6g15l-500h_6g15ls-500h all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 12 july 2013 9 of 13 nxp semiconductors blf6g15l-500h; BLF6G15LS-500H power ldmos transistor fig 11. package outline sot539b references outline version european projection issue date iec jedec jeita sot539b sot539b_po 12-05-02 13-05-24 unit (1) mm max nom min 4.7 4.2 11.81 11.56 31.55 30.94 31.52 30.96 9.5 9.3 9.53 9.27 1.75 1.50 17.12 16.10 3.48 2.97 10.29 10.03 0.25 a dimensions earless flanged balanced ceramic package; 4 leads sot539b bc 0.18 0.10 dd 1 ee 1 e 13.72 fhh 1 25.53 25.27 lq 2.26 2.01 u 1 32.39 32.13 u 2 w 2 0.25 inches max nom min 0.185 0.165 0.465 0.455 1.242 1.218 1.241 1.219 0.374 0.366 0.375 0.365 0.069 0.059 0.674 0.634 0.137 0.117 0.405 0.395 0.01 0.007 0.004 0.54 1.005 0.995 0.089 0.079 1.275 1.265 0.01 w 3 0 5 10 mm scale c e q e 1 e h l b h 1 u 1 u 2 d w 2 w 3 1 2 3 4 d d a f d 1 5 note 1. millimeter dimensions are derived from the original inch dimensions.
blf6g15l-500h_6g15ls-500h all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 12 july 2013 10 of 13 nxp semiconductors blf6g15l-500h; BLF6G15LS-500H power ldmos transistor 9. handling information 10. abbreviations 11. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 10. abbreviations acronym description ccdf complementary cumulative distribution function dvb-t digital video broadcast - terrestrial dvb digital video broadcast esd electrostatic discharge ldmos laterally diffused metal-oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor ofdm orthogonal frequency division multiplexing par peak-to-average power ratio rf radio frequency smd surface mounted device ttf time to failure vswr voltage standing-wave ratio table 11. revision history document id release date data sheet status change notice supersedes blf6g15l-500h_6g15ls-500h v.3 20130712 produc t data sheet - blf6g15l-500h_6g15ls-500h v.2 modifications: ? the package outline figure 11 is updated. ? translation disclaimer added to the legal text. blf6g15l-500h_6g15ls-500h v.2 20110916 produc t data sheet - blf6g15l-500h_6g15ls-500h v.1 modifications: ? the status of this data sheet ha s been changed to product data sheet blf6g15l-500h_6g15ls-500h v.1 20110511 objective data sheet - -
blf6g15l-500h_6g15ls-500h all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 12 july 2013 11 of 13 nxp semiconductors blf6g15l-500h; BLF6G15LS-500H power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
blf6g15l-500h_6g15ls-500h all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 3 ? 12 july 2013 12 of 13 nxp semiconductors blf6g15l-500h; BLF6G15LS-500H power ldmos transistor export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully in demnifies nxp semi conductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive appl ications beyond nxp semiconductors? standard warranty and nxp semicond uctors? product specifications. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 licenses 12.5 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com ics with dvb-t or dvb-t2 functionality use of this product in any manner that complies with the dvb-t or the dvb-t2 standard may require licenses under applicable patents of the dvb-t respectively the dvb-t2 patent portfolio, which license is available from sisvel s.p.a., via sestriere 100, 10060 none (to), italy, and under applicable patents of other parties.
nxp semiconductors blf6g15l-500h; BLF6G15LS-500H power ldmos transistor ? nxp b.v. 2013. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 12 july 2013 document identifier: blf6g15l-500h_6g15ls-500h please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.1 ruggedness in class-ab operation . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 4 7.1 impedance information . . . . . . . . . . . . . . . . . . . 4 7.2 graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.2.1 2-tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.2.2 dvb-t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.2.3 reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.3 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 handling information. . . . . . . . . . . . . . . . . . . . 10 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.4 licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.5 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 contact information. . . . . . . . . . . . . . . . . . . . . 12 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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